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2SC3734 参数 Datasheet PDF下载

2SC3734图片预览
型号: 2SC3734
PDF下载: 下载PDF文件 查看货源
内容描述: NPN硅Epitaxia [NPN Silicon Epitaxia]
分类和应用:
文件页数/大小: 1 页 / 38 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
   
SMD Type
NPN Silicon Epitaxia
2SC3734
Transistors
IC
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Unit: mm
Features
+0.1
2.4
-0.1
+0.1
1.3
-0.1
High speed : t
stg
200ns.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
at 25
ambient temperature
T
j
T
stg
150
-55 to +150
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
Rating
60
40
6
200
200
Unit
V
V
V
mA
mW
Junction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 30V, I
E
=0
V
EB
= 3V, I
C
=0
V
CE
= 1V , I
C
= 10mA
75
200
0.12
0.8
300
510
3.0
4.0
70
100
200
250
Min
Typ
Max
100
100
300
0.3
0.95
V
V
MHz
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= 50mA , I
B
= 5mA
V
BE(sat)
I
C
= 50mA , I
B
= 5mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= 20V , I
E
= -10mA
V
CB
= 5V , I
E
= 0 , f = 1.0MHz
V
CC
= 3V ,
I
C
= 10mA ,
I
B1
= -I
B2
= 1mA
h
FE
Classification
Marking
hFE
B22
75 150
B23
100
200
B24
150
300
0-0.1
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