SMD Type
NPN Silicon Epitaxia
2SC3736
Transistors
Features
High speed,high voltage switching.
Low collector saturation voltage.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (Pulse)*
Total power dissipation
Junction temperature
Storage temperature
* PW
10ms,duty cycle 50%.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
T
T
j
T
stg
Rating
80
45
5
1
2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Gain bandwidth product
Output capacitance
Turn-on time
Storage time
Turn-off time
*. PW
350ìs,duty cycle 2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 45V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 10V , I
C
= 50mA
60
0.17
0.9
300
380
6.7
20
I
C
= 500mA , I
B1
= I
B2
= 50mA
55
72
10
40
80
100
Min
Typ
Max
0.5
0.5
200
0.4
1.2
V
V
MHz
pF
ns
ns
ns
Unit
nA
nA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE(sat)
I
C
= 500mA , I
B
= 50mA
f
T
C
ob
t
on
t
stg
t
off
V
CE
= 10V , I
E
= -100mA
V
CB
= 10V , I
E
= 0, f = 1.0MHz
h
FE
Classification
Marking
hFE
OL
60 120
OK
100 200
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