SMD Type
High-voltage Amplifier Transistor
2SC3906K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
High breakdown voltage.
+0.1
1.3
-0.1
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
2
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
120
120
5
50
0.2
150
-55 to +150
Unit
V
V
V
mA
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=100V
V
EB
=4V
V
CE
=6V, I
C
=2mA
180
Testconditons
Min
120
120
5
0.5
0.5
560
0.5
140
2.5
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=10mA, I
B
=1mA
f
T
C
ob
V
CE
=-12V, I
E
= 2mA, f=100MHz
V
CB
=-12V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
TR
R
180 390
TS
S
270 560
+0.1
0.38
-0.1
0-0.1
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