SMD Type
Transistors
NPN Triple Diffused Planar Silicon Transistor
2SC4003
TO-252
+0.15
1.50
-0.15
Unit: mm
+0.1
2.30
-0.1
Features
High breakdown voltage
+0.2
9.70
-0.2
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
Excellent h
FE
linearity
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (Pulse)
Total Power dissipation Ta = 25
T
C
= 25
Junction temperature
Storage temperature
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
Rating
400
400
5
200
400
1
10
150
-55 to +150
Unit
V
V
V
mA
mA
W
W
3
.8
0
Adoption of MBIT process
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
