SMD Type
Medium Power Transistor
2SC4097
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
Features
+0.1
2.4
-0.1
High I
CMax
.
I
CMax
. = 0.5A
Low V
CE(sat)
.
Optimal for low voltage operation.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
40
32
5
0.5
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
DC Current Gain
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
I
C
= 100ìA
I
C
= 1mA
I
E
= 100ìA
V
CB
= 20V
V
EB
= 4V
V
CE
= 3V, I
C
= 10mA
120
Testconditons
Min
40
32
5
1
1
390
0.6
6.5
250
V
pF
MHz
Typ
Max
Unit
V
V
V
A
A
V
CE(sat)
I
C
/I
B
= 500mA/50mA
C
ob
f
T
V
CB
= 10V, I
E
= 0A, f = 1MHz
V
CE
= 5V, I
E
= -20mA, f = 100MHz
h
FE
Classification
Marking
h
FE
CQ
120
270
CR
180
390
+0.1
0.38
-0.1
0-0.1
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