SMD Type
Silicon NPN Epitaxial
2SC4116
Transistors
IC
Features
High voltage and high current: V
CEO
= 50 V, I
C
= 150 mA (max).
Excellent hFE linearity: h
FE
(I
C
= 0.1 mA)/h
FE
(I
C
= 2 mA) = 0.95 (typ).
High h
FE
: h
FE
= 70 700.
Low noise: NF = 1dB (typ.), 10dB (max).
Small package.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
60
50
5
150
30
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Collector-emitter on resistance
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 60V, I
E
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 6V, I
C
= 2mA
70
0.1
80
2.0
1.0
3.5
10
Min
Typ
Max
0.1
0.1
700
0.25
V
MHz
pF
dB
Unit
ìA
ìA
V
CE (sat)
I
C
= 100mA, I
B
= 10mA
f
T
C
ob
NF
V
CE
= 10V, I
C
= 1mA
V
CB
= 10V, I
E
= 0, f = 1MHz
V
CE
= 6V, I
C
= 0.1mA, f = 1kHz, R
g
=
10kÙ
h
FE
Classification
Marking
hFE
LO
70 140
LY
120 240
LG
200 400
LL
350 700
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