SMD Type
NPN Silicon Epitaxial Transistor
2SC4180
Features
Small dimension
High DC current gain
Transistors
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
T
T
j
T
stg
Rating
120
120
5
50
150
150
-55 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Collector-emitter saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulse test: tp
350 ìs; d
0.02.
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 120V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
= 6V , I
C
= 1mA*
V
CE
= 6V , I
C
= 0.1mA
V
CE(sat)
I
C
= 10mA , I
B
= 1mA
V
BE
f
T
C
ob
V
CE
=6V , I
C
= 1mA
V
CE
= 6V , I
E
= -1mA
V
CB
= 30V , I
E
= 0 , f = 1.0MHz
0.55
50
135
100
600
580
0.07
0.59
110
1.6
2.5
0.3
0.65
V
V
MHz
pF
Min
Typ
Max
0.05
0.05
900
Unit
ìA
ìA
h
FE
Classification
Marking
hFE
D15
135 270
D16
200 400
D17
300 600
D18
450 900
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
