SMD Type
NPN Silicon Epitaxial Transistor
2SC4226
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
Unit: mm
+0.1
2.4
-0.1
Features
Low noise and high gain.
NF = 1.2 dB Typ. @V
CE
= 3V, I
C
= 7 mA, f = 1.0 GHz
High gain.
|S
21e
|
2
= 9.0 dB TYP. @ f = 1 GHz, V
CE
= 3 V, I
C
= 7 mA
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
3
+0.05
0.1
-0.01
+0.1
0.97
-0.1
1.Base
2.Emitter
3.collector
+0.1
0.38
-0.1
0-0.1
1 Emitter
2
Base
Base
2
3
3
Collector
Collecotr
1 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
12
3.0
100
150
150
-65 to +150
Unit
V
V
V
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Insertion power gain
Noise figure
Reverse transfer capacitance
Transition frequency
*. Pulse measurement: PW
350
s, Duty Cycle
Symbol
I
CBO
I
EBO
h
FE
S
21e
NF
C
re
f
T
2%.
2
Testconditons
V
CB
= 10 V, I
E
= 0
V
EB
= 1.0 V, I
C
= 0
V
CE
= 3V, I
C
= 7 mA
V
CE
= 3V, I
C
= 7 mA, f = 1 GHz
V
CE
= 3 V, I
C
= 7 mA, f = 1 GHz
V
CB
= 3 V, I
E
= 0 , f = 1 MHz
V
CE
=3V, I
C
= 7 mA
Min
Typ
Max
1.0
1.0
Unit
A
A
40
7
110
9
1.2
0.7
250
dB
2.5
1.5
dB
pF
GHz
3.0
4.5
h
FE
Classification
Marking
Rank
hFE
R23
R23
40
80
R24
R24
70
140
R25
R25
125
250
www.kexin.com.cn
www.kesenes.com
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
