SMD Type
Silicon NPN Epitaxial
2SC4253
Transistors
IC
Features
Good linearity of f
T.
1 Emitter
2 Base
3 Collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
30
25
4
50
25
100
125
-55 to +125
Unit
V
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector output capacitance
Collector-base time constant
Transition frequency
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 30 V, I
E
= 0
V
EB
= 3 V, I
C
= 0
25
20
70
200
0.2
1.5
1.1
1.6
25
250
600
V
V
pF
ps
MHz
Min
Typ
Max
0.1
0.1
Unit
ìA
ìA
V
V
(BR)CEO
I
C
= 1 mA, I
B
= 0
h
FE
V
CE
= 10 V, I
C
= 10 mA
V
CE(sat)
I
C
= 15 mA, I
B
= 1.5mA
V
BE(sat)
I
C
= 15 mA, I
B
= 1.5mA
C
ob
C
c
.r
bb
'
f
T
V
CB
= 10 V, I
E
= 0, f = 1MHz
V
CB
= 10 V, I
C
= 1mA, f = 30MHz
V
CE
= 10 V, I
C
= 10 mA
Marking
Marking
HH
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