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2SC4272 参数 Datasheet PDF下载

2SC4272图片预览
型号: 2SC4272
PDF下载: 下载PDF文件 查看货源
内容描述: NPN外延平面硅晶体管 [NPN Epitaxial Planar Silicon Transistor]
分类和应用: 晶体晶体管放大器
文件页数/大小: 3 页 / 445 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
 浏览型号2SC4272的Datasheet PDF文件第2页浏览型号2SC4272的Datasheet PDF文件第3页  
SMD Type
Transistors
27MHz CB Transceiver Driver Applications
2SC4272
Features
Small Size Making It Easy To Provide High-Density,
Small-Sized Hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* Mounted on ceramic board (250 mm
2
x 0.8 mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C *
T
j
T
stg
Rating
75
45
5
1.0
1.5
1.3
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Gain-Bandwidth Product
Collector Output Capacitance
Output Power
Collector Efficiency
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 40V , I
E
= 0
V
EB
= 4V , I
C
= 0
75
45
5
60
0.2
0.9
180
250
15
1.0
60
1.8
320
0.6
1.2
V
V
MHz
pF
W
%
Min
Typ
Max
1.0
1.0
Unit
A
A
V
V
V
V
(BR)CBO
I
C
= 10uA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10uA , I
C
= 0
h
FE
V
CE
= 5V , I
C
= 500mA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE(sat)
I
C
= 500mA , I
B
= 50mA
f
T
C
ob
P
O
c
V
CE
= 10V , I
C
= 50mA
V
CB
= 10V , f = 1MHz
V
CC
= 12V , f = 27MHz , Pin = 35mW
See Test Circuit.
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