SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SC4705
Features
High DC current gain (h
FE
=800 to 3200).
Low collector-to-emitter saturation voltage :
V
CE(sat)
0.5V max.
15V.
High V
EBO
: V
EBO
Small size making it easy to provide high-density,
hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Base current
Collector dissipation,mounted on ceramic
board(250mm
2
X0.8mm)
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
60
50
15
200
300
40
1.3
150
-55 to +150
Unit
V
V
V
mA
mA
mA
W
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