SMD Type
Medium Power Transistor
2SC5053
Transistors
Features
Low saturation voltage, typically V
CE(sat)
= 0.12V at I
C
/
I
B
= 500mA / 50mA.
P
C
=2W (on 40×40×0.7mm ceramic board).
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
(Pulse) *
1
P
C
P
C
*
2
T
j
T
stg
Rating
-60
-50
-5
-1
-2
0.5
2
150
-55 to +150
Unit
V
V
V
A
A
W
W
Collector power dissipation
Junction temperature
Storage temperature
*1. Single pulse, Pw=100ms, duty=1/2.
*2. 40X40X0.7mm Ceramic board.
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Forward current transfer ratio
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=-50ìA
I
C
=-1mA
I
E
=-50ìA
V
CB
=-40V
V
EB
=-4V
Testconditons
Min
-60
-50
-5
-0.1
-0.5
-0.4
120
150
20
270
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
=-500mA,I
B
=-50mA
h
FE
f
T
C
ob
V
CE
=-3V,I
C
=-0.5A
V
CE
=-5V, I
E
= 50mA, f=100MHz
V
CB
=-10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
CG
QR
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