SMD Type
High Voltage Switching Transistor
2SC5161
TO-252
Transistors
Unit: mm
+0.1
2.30
-0.1
Features
Low V
CE(sat)
.
V
CE(sat)
= 0.15V (Typ.),I
C
/ I
B
= 1A / 0.2A
+0.2
9.70
-0.2
+0.15
1.50
-0.15
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
High breakdown voltage.V
CEO
= 400V
Fast switching.t
r
= 1.0ìs,I
C
= 0.8A
NPN silicon transistor
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current *
Collector current
Collector power dissipation
T
C
= 25
Ta = 25
Junction temperature
Storage temperature
* Single pulse pw=10ms
T
j
T
stg
Symbol
V
CBO
V
CES
V
EBO
I
CP
I
C
P
C
Rating
400
400
7
4
2
10
1
150
-55 to +150
Unit
V
V
V
A(Puse)
A(DC)
W
3
.8
0
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