SMD Type
NPN Silicon Epitaxial Transistor
2SD1006
Transistors
Features
High collector to emitter voltage: V
CEO
100V.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector l power dissipation
Junction temperature
Storage temperature
*. PW
10ms,duty cycle 50%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C(pu)
P
c
T
j
T
stg
Rating
100
100
5
0.7
1.2
2
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Base-emitter voltage *
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector-emitter saturation voltage *
Base-emitter saturation voltage *
Output capacitance
Transition product
*. PW
350ìs,duty cycle 2%
Symbol
V
BE
I
CBO
I
EBO
h
FE
Testconditons
V
CE
=10V , I
C
= 10mA
V
CB
= 100V, I
E
=0
V
EB
= 5V, I
C
=0
V
CE
=1V , I
C
= 5.0mA
V
CE
=1V , I
C
= 100mA
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
V
BE(sat)
I
C
= 500mA , I
B
= 50mA
C
ob
f
T
V
CB
= 10V , I
E
= 0 , f = 1.0MHz
V
CE
= 10V , I
E
= -10mA
45
90
200
200
0.3
0.9
10
90
400
0.6
1.5
V
V
pF
MHz
Min
550
Typ
620
Max
650
100
100
Unit
mV
nA
nA
h
FE
Classification
Marking
hFE
HM
90 180
HL
135 270
HK
200 400
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