SMD Type
Silicon NPN Epitaxial Transistor
2SD1220
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Features
Power Amplifier Applications
+0.2
9.70
-0.2
+0.15
0.50
-0.15
+0.15
5.55
-0.15
+0.1
0.80
-0.1
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25
Tc = 25
Junction temperature
Storage temperature range
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Rating
150
150
6
1.5
1
1
10
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
V
(BR) CEO
h
FE
V
CE (sat)
V
BE
f
T
C
ob
Testconditons
V
CB
= 150 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
I
C
= 10 mA, I
B
= 0
V
CE
= 5 V,
IC
= 200 mA
I
C
= 500 mA, I
B
= 50 mA
V
CE
= 5 V, I
C
= 5 mA
V
CE
= 5 V, I
C
= 200 mA
V
CB
= 10 V, I
E
= 0, f = 1 MHz
0.5
20
100
13
20
150
60
320
1.5
0.8
V
V
MHz
pF
Min
Typ
Max
1.0
1.0
Unit
ìA
ìA
V
h
FE
Classification
Marking
Rank
hFE
R
60 to 120
D1220
O
100 to 200
Y
160 to 320
3
.8
0
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