SMD Type
Silicon NPN Epitaxial
2SD1418
Transistors
Features
Low frequency power amplifier.
Absolute Maximum Ratings Ta = 25
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
*1. PW
10 ms; d
0.02.
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
*
1
P
C
*
2
Tj
T
stg
Rating
120
80
5
1
2
1
150
-55 to +150
Unit
V
V
V
A
A
W
*2. Value on the alumina ceramic board (12.5 X 20 X 0.7 mm)
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
DC current transfer ratio
Collector to emitter saturation voltage
Base to emitter voltage
Gain bandwidth product
Collector output capacitance
Symbol
Testconditons
Min
120
80
5
10
60
320
1
1.5
140
12
V
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
V
(BR)CBO
I
C
= 10 ìA, I
E
= 0
V
(BR)CEO
I
C
= 1 mA, R
BE
=
V
(BR)EBO
I
E
= 10 ìA, I
C
= 0
I
CBO
h
FE
V
CB
= 100 V, I
E
= 0
V
CE
= 5 V,I
C
= 150 mA
V
CE(sat)
I
C
= 500 mA,I
B
= 50 mA
V
BE
f
T
C
ob
V
CE
= 5 V,I
C
= 150 mA
V
CE
= 5 V,I
C
= 150 mA
V
CB
= 10 V, I
E
= 0,f = 1 MHz
h
FE
Classification
Marking
Rank
hFE
A
60 120
D
B
100 200
C
160 320
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
