SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1620
Features
Less power dissipation because of low V
CE(sat)
,
permitting more flashes of light to be emitted.
Large current capacity and highly resistant to breakdown.
Excellent linearity of hFE in the region from low
current to high current.
Ultrasmall size supports high-density, ultrasmallsized
hybrid IC designs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
* Mounted on ceramic board(250mm2×0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
*
T
j
T
stg
Rating
30
25
6
3
5
500
1.3
150
-55 to +150
Unit
V
V
V
A
A
mW
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Symbol
I
CBO
I
EBO
h
FE
f
T
C
ob
Testconditons
V
CB
= 20 V, I
E
=0
V
EB
= 4 V, I
C
=0
V
CE
= 2 V , I
C
= 3 A
V
CE
= 10 V , I
C
= 50 mA
V
CB
= 10 V , f = 1.0MHz
140
210
200
30
0.3
30
20
10
6
0.4
MHz
pF
V
V
V
V
V
Min
Typ
Max
100
100
Unit
nA
nA
V
CE(sat)
I
C
= 3 A , I
B
= 60 mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEX
I
C
= 1mA , V
BE
= 3 V
V
(BR)CEO
I
C
= 1mA , R
BE
=
V
(BR)EBO
I
E
= 10ìA , I
C
= 0
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