SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1622
Features
Adoption of FBET process..
Very small size making it easy to provide highdensity
hybrid IC’
s.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Junction temperature
Storage temperature
* Mounted on ceramic board(250mm2X0.8mm)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
P
C
*
T
j
T
stg
Rating
60
50
5
1
2
500
1.3
150
-55 to +150
Unit
V
V
V
A
A
mW
W
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