SMD Type
Medium Power Transistor
2SD1664
Transistors
Features
Low V
CE(sat)
Compliments to 2SB1132
Absolute Maximum Ratings Ta = 25
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
(DC)
P
W
=20ms, duty=1/2
Collector Power Dissipation
Jumction temperature
Storage temperature Range
* mounted on a 40x40x0.7mm ceramic board.
P
C
*
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
40
32
5
1
2
0.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector Cut-off Current
Emitter Cut-off Current
Collector-base Breakdown Voltage
Collector-emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
DC Current Gain
Collector-emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
Symbol
I
CBO
I
EBO
Testconditons
V
CB
= 20V , I
E
= 0
V
EB
= 4V , I
C
= 0
40
32
5
82
0.15
150
15
390
0.4
V
MHz
pF
Min
Typ
Max
0.5
0.5
Unit
ìA
ìA
V
V
V
(BR)CBO
I
C
= 50uA , I
E
= 0
V
(BR)CEO
I
C
= 1mA , I
B
= 0
V
(BR)EBO
I
E
= 50uA
h
FE
V
CE
= -3V , I
C
= -0.1A
V
CE(sat)
I
C
= 500mA , I
B
= 50mA
f
T
C
ob
V
CE
= 5V , I
E
= -50mA , f = 100MHz
V
CB
= 10V , I
E
= 0 , f = 1MHz
h
FE
Classification
Marking
Rank
h
FE
82
P
180
120
DA
Q
270
180
R
390
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