SMD Type
NPN Silicon Epitaxial Transistor
2SD1615
Transistors
Features
World Standard Miniature Package.
Low V
CE(sat)
V
CE(sat)
= 0.15 V
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector Current (pulse) *1
Total power dissipation at 25
Junction temperature
Storage temperature
* 1Pulse Test PW
10ms, Duty Cycle
50%.
Ambient Temperature *2
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
P
T
T
j
T
stg
Rating
60
50
6
1
2
2.0
150
-55 to +150
Unit
V
V
V
A
A
W
*2 When mounted on ceramic substrate of 16 cm
2
X 0.7 mm
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain *
Collector saturation voltage *
Base saturation voltage *
Base-emitter voltage *
Gain bandwidth product
Output capacitance
* Pulsed: PW
350 ìs, duty cycle
2%
Symbol
I
CBO
I
EBO
h
FE
Testconditons
V
CB
= 60 V, I
E
= 0 A
V
EB
= 6.0 V, I
C
= 0 A
V
CE
= 2.0 V, I
C
= 100 mA
135
290
0.15
0.9
600
80
160
19
Min
Typ
Max
100
100
600
0.3
1.2
700
V
V
mV
MHz
pF
Unit
nA
nA
V
CE(sat)
I
C
= 1 A, I
B
= 50 mA
V
BE(sat)
I
C
= 1 A, I
B
= 50 mA
V
BE
f
T
C
ob
V
CE
= 2.0 V, I
C
= 50 mA
V
CE
= 2.0 V, I
E
= -100 mA
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
h
FE
Classification
Marking
hFE
GM
135 270
GL
200 400
GK
300 600
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