SMD Type
Power Transistor
2SD1733
Features
High V
CEO
, V
CEO
=80V .
High I
C
, I
C
=1A (DC) .
Good hFE linearity .
+0.2
9.70
-0.2
Transistors
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Low V
CE (sat)
.
Epitaxial planer type
NPN silicon transistor
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Tc = 25
Junction temperature
Storage temperature
* Pw=20ms.
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
(Pulse) *
P
C
Rating
120
80
5
1
2
1
10
150
-55 to +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=100V
V
EB
=4V
V
CE
=3V,I
C
=0.5A
82
0.15
100
20
Testconditons
Min
120
80
5
1
1
390
0.4
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=500mA,I
B
=20mA
f
T
C
ob
V
CE
=10V, I
E
= -50mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Rank
h
FE
P
82 180
Q
120 270
R
180 390
3
.8
0
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