SMD Type
Power Transistor
2SD1782K
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
Transistors
IC
Unit: mm
Features
+0.1
2.4
-0.1
High V
CEO
, V
CEO
=80V.
1
+0.1
0.95
-0.1
+0.1
1.9
-0.1
+0.1
1.3
-0.1
Low V
CE(sat)
.V
CE(sat)
= 0.2V(Typ.) I
C
/ I
B
= 0.5A / 50mA
2
0.55
0.4
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
80
80
5
0.5
0.2
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50ìA
I
C
=2mA
I
E
=50ìA
V
CB
=50V
V
EB
=4V
0.2
120
120
7.5
Testconditons
Min
80
80
5
0.5
0.5
0.5
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
/I
B
=500mA/50mA
h
FE
f
T
C
ob
V
CE
=3V, I
C
=100mA
V
CE
=10V, I
E
= -50mA, f=100MHz
V
CB
=10V, I
E
=0, f=1MHz
h
FE
Classification
Marking
Rank
h
FE
Q
120 270
AJ
R
180 390
0-0.1
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
