SMD Type
Medium Power Transistor
2SD1766
SOT-89
+0.1
4.50
-0.1
Transistors
Unit: mm
+0.1
1.50
-0.1
1.80
+0.1
-0.1
+0.1
2.50
-0.1
Features
Low V
CE(sat)
, V
CE(sat)
= 0.5V (typical)
(I
C
= 2A, I
B
= 0.2A).
+0.1
0.80
-0.1
+0.1
0.48
-0.1
+0.1
0.53
-0.1
+0.1
4.00
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
C
(Pulse) *
1
Collector power dissipation
P
C
P
C
*
2
Junction temperature
Storage temperature
*1. Pw=20ms.
*2. 40 40 0.7mm Ceramic board.
T
j
T
stg
Rating
40
32
5
2
2.5
0.5
2
150
-55 to +150
Unit
V
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Collector-emitter saturation voltage
Transition frequency
Output capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=20V
V
EB
=4V
V
CE
=3V,I
C
=0.5A
82
0.5
100
30
Testconditons
Min
40
32
5
1
1
390
0.8
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=2A,I
B
=0.2A
f
T
C
ob
V
CE
=5V, I
E
= -500mA, f=100MHz
V
CB
=10V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
h
FE
P
82 180
DB
Q
120 270
R
180 390
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
