SMD Type
Silicon NPN Epitaxial
2SD1918
TO-252
Transistors
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
High breakdown voltage.(B
VCEO
= 160V)
Low collector output capacitance.Typ. 20pF at V
CB
= 10V
+0.2
9.70
-0.2
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
High transition frequency.(f
T
= 80MHZ)
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
T
C
= 25
Junction temperature
Storage temperature
* Pw=200msec duty=1/2
T
j
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
Rating
160
160
5
1.5
3
P
C
1
10
150
-55 to +150
Unit
V
V
V
A(DC)
A(Pulse) *
W
W
Electrical Characteristics Ta = 25
Parameter
Collector to base breakdown voltage
Collector to emitter breakdown voltage
Emitter to base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector to emitter saturation voltage *
Base to emitter voltage *
DC current transfer ratio
Transition frequency
Output capacitance
* Measured using pulse current.
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
V
CE(sat)
V
BE(sat)
h
FE
f
T
C
ob
I
C
= 50ìA
I
C
= 1mA
I
E
= 50ìA
V
CB
= 120V
V
EB
= 4V
I
C
/I
B
= 1A/0.1A
I
C
/I
B
= 1A/0.1A
V
CE
/I
C
= 5V/0.1A
V
CE
= 5V , I
E
= -0.1A , f = 30MHz
V
CB
= 10V , I
E
= 0A , f = 1MHz
120
80
20
Testconditons
Min
160
160
5
1
1
2
1.5
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
h
FE
Classification
Rank
hFE
Q
120 to 270
R
180 to 390
3
.8
0
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