SMD Type
Power Transistor
2SD1963
Transistors
Features
Low saturation voltage.
Excellent DC current gain characteristics.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
50
20
6
3
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=40V
V
EB
=5V
V
CE
=2V, I
C
=0.5A
180
0.25
150
35
Testconditons
Min
50
20
6
0.5
0.5
560
0.45
V
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
CE(sat)
I
C
=1.5 A, I
B
=0.15A
f
T
C
ob
V
CE
=6V, I
E
= -50mA, f=100MHz
V
CB
=20V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
R
180 390
DG
S
270 560
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