SMD Type
Transistors
NPN Epitaxial Planar Silicon Transistor
2SD1998
Features
Low saturation voltage.
Contains diode between collector and emitter.
Contains bias resistance between collector and emitter.
Large current capacity.
Small-sized package making it easy to provide highdensity,
small-sized hybrid ICs.
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
40
30
6
3
5
1.5
150
-55 to +150
Unit
V
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
DC current Gain
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-to-base breakdown voltage
Collector-to-emitter breakdown voltage
Diode forward voltage
Base-emitter resistance
Symbol
Ic
BO
h
FE
f
T
C
ob
Testconditons
V
CB
= 30V , I
E
= 0
V
CE
= 2V , I
C
= 0.5A
V
CE
= 2V , I
C
= 2A
V
CE
= 2V , I
C
= 0.5A
V
CB
= 10V , f = 1MHz
70
50
100
40
0.2
0.5
1.5
40
40
30
1.5
0.8
V
kÙ
MHz
pF
V
V
V
V
Min
Typ
Max
1.0
Unit
ìA
V
CE(sat)
I
C
= 2A , I
B
= 100mA
V
BE(sat)
I
C
= 2V , I
B
= 100mA
V
(BR)CBO
I
C
= 10ìA , I
E
= 0
V
(BR)CEO
V
F
R
BE
I
C
= 10ìA , R
BE
=
I
C
= 10mA , R
BE
=
I
F
= 0.5A
Marking
Marking
DM
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