SMD Type
Low V
CE(sat)
Transistor
2SD2098
SOT-89
+0.1
4.50
-0.1
+0.1
1.80
-0.1
Transistors
Unit: mm
+0.1
1.50
-0.1
Features
Excellent DC current gain characteristics.
+0.1
4.00
-0.1
Low V
CE(sat)
.
1
NPN silicon transistor.
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.50
-0.1
+0.1
2.60
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
2. Collector
3. Emiitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
T
stg
Rating
50
20
6
5
0.5
150
-55 to +150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=40V
V
EB
=5V
0.3
120
150
30
Testconditons
Min
50
20
6
0.5
0.5
1.0
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
=4 A, I
B
=0.1A
h
FE
f
T
C
ob
V
CE
=2V, I
C
=0.5A
V
CE
=6V, I
E
= -50mA, f=100MHz
V
CB
=20V, I
E
=0A, f=1MHz
h
FE
Classification
Marking
Rank
hFE
Q
120 270
DJ
R
180 390
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