SMD Type
Low V
CE(sat)
Transistor
2SD2118
TO-252
+0.15
1.50
-0.15
Transistors
Unit: mm
+0.1
2.30
-0.1
Features
Low V
CE(sat)
.
Excellent DC current gain characteristics.
+0.15
6.50
-0.15
+0.2
5.30
-0.2
0.50
+0.8
-0.7
+0.1
0.80
-0.1
+0.15
0.50
-0.15
NPN silicon transistor.
+0.2
9.70
-0.2
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Base
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse) *
Collector power dissipation
T
C
= 25
Junction temperature
Storage temperature
* Pw=10ms.
Tj
T
stg
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Rating
50
20
6
5
10
10
1
10
150
-55 to +150
Unit
V
V
V
A (DC)
A(Pulse)*
A
W
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
I
C
=50ìA
I
C
=1mA
I
E
=50ìA
V
CB
=40V
V
EB
=5V
0.3
120
150
30
Testconditons
Min
50
20
6
0.5
0.5
1.0
390
MHz
pF
Typ
Max
Unit
V
V
V
ìA
ìA
V
V
CE(sat)
I
C
=4 A, I
B
=0.1A
h
FE
f
T
C
ob
V
CE
=2V, I
C
=0.5A
V
CE
=6V, I
E
= -50mA, f=100MHz
V
CB
=20V, I
E
=0A, f=1MHz
h
FE
Classification
Rank
hFE
Q
120 270
R
180 390
3
.8
0
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
