SMD Type
NPN Silicon Power Transistor
2SD882
Transistors
Features
Excellent h
FE
linearity and high h
FE
h
FE
= 60 to 400 (V
CE
= 2 V, I
C
= 1 A)
Absolute Maximum Ratings Ta = 25
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current to Continuous
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
c
T
J
T
stg
Rating
40
30
6
3
0.5
150
-55 to 150
Unit
V
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Testconditons
I
c
=100uA ,I
E
=0
I
C
= 10 mA , I
B
=0
I
E
= 100 uA ,I
C
=0
V
CB
=40 V , I
E
=0
V
CE
=30 V , I
B
=0
V
EB
=6V , I
C
=0
V
CE
= 2V, I
C
= 1A
V
CE
=2V, I
C
= 100mA
I
C
=2A, I
B
= 0.2A
I
C
=2A, I
B
= 0.2A
V
CE
=5 V, I
C
=0.1mA,f = 10MHz
50
60
32
0.5
1.5
V
V
MHz
Min
40
30
6
1
10
1
400
Typ
Max
Unit
V
V
V
uA
uA
uA
hFE Classification
Rank
hFE
R
60 120
O
100 200
P
160 320
E
200 400
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