SMD Type
MOS Fied Effect Transistor
2SJ207
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
+0.1
2.4
-0.1
Has low on-state resistance
R
DS(on)
=4
R
DS(on)
=1.5
MAX.@V
GS
=-2.5V,I
D
=-30mA
MAX.@V
GS
=-4.0V,I
D
=-500mA
+0.1
1.3
-0.1
Directly driven by Ics having a 3V poer supply.
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage V
GS
=0
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
10 ms; d
50%.
V
DS
=0
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
T
ch
T
stg
Rating
-16
16
1.0
2.0
2.0
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=-16V,V
GS
=0
V
GS
=
16V,V
DS
=0
-1.4
0.4
-1.9
0.7
2.6
0.9
180
V
DS
=-3.0V,V
GS
=0,f=1MHZ
160
50
180
V
GS(on)
=-3V,R
G
=10
100mA R
L
=30
,V
DD
=-3V,I
D
=-
500
130
240
4.0
1.5
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
-10
5
-2.4
Unit
A
A
V
s
V
GS(off)
V
DS
=-5.0V,I
D
=-1mA
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-3.0V,I
D
=-500mA
V
GS
=-2.5V,I
D
=-30mA
V
GS
=-4V,I
D
=-500mA
Marking
Marking
PE
0-0.1
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