SMD Type
MOS Fied Effect Transistor
2SJ212
SOT-89
+0.1
4.50
-0.1
MOSFET
Unit: mm
+0.1
1.50
-0.1
Features
Directly driven by Ics having a 5V poer supply.
Has low on-state resistance
R
DS(on)
=4.0
R
DS(on)
=3.0
MAX.@V
GS
=-4.0V,I
D
=-0.3A
MAX.@V
GS
=-1.0V,I
D
=-0.5A
1.80
+0.1
-0.1
+0.1
2.50
-0.1
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage V
GS
=0
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
10 ms; d
50%.
V
DS
=0
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
T
ch
T
stg
Rating
-60
20
500
1.0
2.0
150
-55 to +150
Unit
V
V
mA
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=-60V,V
GS
=0
V
GS
=
20V,V
DS
=0
-1.0
0.4
-2.2
0.54
1.5
0.8
160
V
DS
=-5.0V,V
GS
=0,f=1MHZ
100
25
130
V
GS(on)
=-4V,R
G
=10
0.3A R
L
=1.5
,V
DD
=-5V,I
D
=--
380
95
140
4.0
3.0
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
-10
10
-3.0
Unit
A
A
V
s
V
GS(off)
V
DS
=-10V,I
D
=-1mA
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=-5.0V,I
D
=-0.3A
V
GS
=-4.0V,I
D
=-0.3A
V
GS
=-10V,I
D
=-0.5A
Marking
Marking
PD
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