SMD Type
Mos Field Effect Power Transistor
2SJ302
TO
-
263
+0.1
1.27
-0.1
MOSFET
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Low on-state resistance
R
DS(on)
0.1
R
DS(on)
0.24
(V
GS
=-10V,I
D
=-8A)
Low C
iss
C
iss
=1200PF TYP.
+0.2
5.28
-0.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
(V
GS
=-4V,I
D
=-6A)
+0.2
8.7
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
10
s; d
1%.
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
T
ch
T
stg
Rating
-60
-20,+10
16
64
75
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut-off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Reverse Recovery Time
Reverse Recvery Charge
Diode Forward Voltage
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=-60V,V
GS
=0
V
GS
=
16V,V
DS
=0
-1.0
5.0
75
130
1200
V
DS
=-10V,V
GS
=0,f=1MHZ
670
290
30
V
GS(on)
=-10V,V
DD
=-30V,I
D
=--8A
R
L
=3.75 ,R
G
=10
170
150
130
V
GS
=-10V,I
D
=-8A
I
D
=-16V
V
DD
=-48V
I
F
=-16A,V
GS
=0,d
i
/d
t
=50A/
I
F
=-16A,V
GS
=0
s
42
3
17
110
220
1
100
240
Min
Typ
Max
-10
10
-2.0
Unit
A
A
V
s
m
m
pF
pF
pF
ns
ns
ns
ns
nc
nc
nc
ns
nc
V
V
GS(off)
V
DS
=-10V,I
D
=-1mA
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
t
rr
Q
rr
V
SD
V
DS
=-10V,I
D
=-8A
V
GS
=-10V,I
D
=-8A
V
GS
=-4V,I
D
=-6A
5.60
1 Gate
2 Drain
3 Source
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
