SMD Type
MOS Field Effect Transistor
2SJ601
TO-252
+0.15
1.50
-0.15
IC
MOSFET
Features
Low on-resistance
R
DS(on)1
= 31 m
R
DS(on)2
= 46m
MAX. (V
GS
=-10 V, I
D
= -18 A)
6.50
+0.2
5.30
-0.2
+0.15
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
Built-in gate protection diode
2.3
+0.15
4.60
-0.15
+0.15
0.50
-0.15
Low C
iss
: C
iss
= 3300 pF TYP.
0.127
max
+0.15
5.55
-0.15
1 Gate
2 Drain
3 Source
+0.1
0.60
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
T
C
=25
T
A
=25
Channel temperature
Storage temperature
* PW
10
s, duty cycle
1%
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
P
D
T
ch
T
stg
Rating
-60
20
36
120
65
1.0
150
-55 to +150
Unit
V
V
A
A
W
W
3
.8
0
MAX. (V
GS
= -4.0 V, I
D
=-18 A)
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
