SMD Type
MOS Field Effect Transistor
2SJ607
TO
-
263
+0.1
1.27
-0.1
MOSFET
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Low on-resistance
R
DS(on)1
=11 m
R
DS(on)2
= 16 m
MAX. (V
GS
=-10 V, I
D
= -42A)
Low C
iss
: C
iss
= 7500 pF TYP.
Built-in gate protection diode
+0.2
5.28
-0.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
MAX. (V
GS
= -4.0 V, I
D
=-42 A)
+0.2
8.7
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
T
C
=25
T
A
=25
Channel temperature
Storage temperature
* PW
10
s, duty cycle
1%
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
P
D
T
ch
T
stg
Rating
-60
20
83
332
160
1.5
150
-55 to +150
Unit
V
V
A
A
W
W
5.60
1 Gate
2 Drain
3 Source
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