SMD Type
MOS Field Effect Power Transistor
2SK1284
IC
MOSFET
Features
Low on-state resistance
R
DS(on)
R
DS(on)
0.32 .@V
GS
=10V,I
D
=2A
0.40 @V
GS
=4V,I
D
=2A
+0.2
9.70
-0.2
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
+0.1
0.80
-0.1
+0.15
0.50
-0.15
Built-in G-S Gate Protection Diode
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
T
C
=25
T
A
=25
Channel temperature
Storage temperature
* PW
10ms, duty cycle
5%
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
Rating
100
20
3.0
12
2.0
1.0
150
-55 to +150
Unit
V
V
A
A
W
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=100V,V
GS
=0
V
GS
= 20V,V
DS
=0
1.0
2.4
0.26
0.32
500
V
DS
=10V,V
GS
=0,f=1MHZ
160
20
40
I
D
=2A,V
GS(on)
=10V,R
L
=25
,V
DD
=50V,R
G
=10
55
500
120
0.32
0.40
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
10
10
2.5
Unit
A
A
V
s
V
GS(off)
V
DS
=10V,I
D
=1mA
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=10V,I
D
=2A
V
GS
=10V,I
D
=2A
V
GS
=4.0V,I
D
=2A
3
.8
0
Low Ciss Ciss=500pF TYP.
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