SMD Type
MOS Field Effect Transistor
2SK1399
SOT-23
+0.1
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
+0.1
2.4
-0.1
Not necessary to consider driving current because of it is high input
impedance
Possible to reduce the number of parts by omitting the bias resistor
+0.1
1.3
-0.1
Can be driven by a 3.0-V power source
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
10ms, duty cycle
5%
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
T
ch
T
stg
Rating
50
7.0
100
200
200
150
-55 to +150
Unit
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=50V,V
GS
=0
V
GS
= 7.0V,V
DS
=0
0.9
20
1.2
38
22
14
8
V
DS
=3.0V,V
GS
=0,f=1MHZ
7
3
15
I
D
=20mA,V
GS(on)
=3V,R
L
=150
,V
DD
=3.0V,R
G
=10
100
30
35
40
20
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
10
5.0
1.5
Unit
A
A
V
ms
V
GS(off)
V
DS
=3.0V,I
D
=1 A
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=3.0V,I
D
=10mA
V
GS
=2.5V,I
D
=10mA
V
GS
=4.0V,I
D
=10mA
Marking
Marking
G12
0-0.1
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