SMD Type
MOS Field Effect Transistor
2SK1582
SOT-23
MOSFET
Unit: mm
Can be driven by Ics having a 5V single power supply.
+0.1
2.4
-0.1
Not necessry to consider driving current because of its thgh input impedance.
Possible to reduce the number of parts by omitting the bias resistor
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
10ms, duty cycle
5%
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
T
ch
T
stg
Rating
30
20
200
400
200
150
-55 to +150
Unit
V
V
mA
mA
mW
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=30V,V
GS
=0
V
GS
= 20V,V
DS
=0
0.9
20
1.2
60
2.2
1.4
28
V
DS
=5.0V,V
GS
=0,f=1MHZ
30
7
55
I
D
=10mA,V
GS(on)
=5.0V,R
L
=500
,V
DD
=5.0V,R
G
=10
200
180
250
5.0
3.0
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
10
10
1.5
Unit
A
A
V
ms
V
GS(off)
V
DS
=5.0V,I
D
=10 A
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=5.0V,I
D
=10mA
V
GS
=4.0V,I
D
=10mA
V
GS
=10V,I
D
=10mA
Marking
Marking
G15
0-0.1
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