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2SK1583 参数 Datasheet PDF下载

2SK1583图片预览
型号: 2SK1583
PDF下载: 下载PDF文件 查看货源
内容描述: MOS场效应 [MOS Field Effect Transistor]
分类和应用: 晶体晶体管开关
文件页数/大小: 1 页 / 45 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
   
SMD Type
MOS Field Effect Transistor
2SK1583
SOT-89
+0.1
4.50
-0.1
MOSFET
Unit: mm
+0.1
1.50
-0.1
Features
Can be driven by Ics having a3V single power supply.
Has low on-state resistance
R
DS(on)
=2.0 MAX.@V
GS
=2.5V,I
D
=0.3A
R
DS(on)
=1.5 MAX.@V
GS
=4.0V,I
D
=0.3A
1.80
+0.1
-0.1
+0.1
2.50
-0.1
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
+0.1
3.00
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current (DC)
Drain current(pulse) *
Power dissipation
Channel temperature
Storage temperature
* PW
10ms, duty cycle
5%
Symbol
V
DSS
V
GSS
I
D
I
D
P
D
T
ch
T
stg
Rating
16
16
0.5
1.0
2.0
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=16V,V
GS
=0
V
GS
= 16V,V
DS
=0
0.9
20
1.2
60
1.8
0.8
60
V
DS
=5.0V,V
GS
=0,f=1MHZ
70
15
95
I
D
=0.3A,V
GS(on)
=3V,R
L
=33
,V
DD
=10V,R
G
=10
360
160
150
2.0
1.5
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
10
10
1.5
Unit
A
A
V
ms
V
GS(off)
V
DS
=5.0V,I
D
=10mA
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
=5.0V,I
D
=0.3A
V
GS
=2.5V,I
D
=0.3A
V
GS
=4.0V,I
D
=0.3A
Marking
Marking
ND
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