SMD Type
MOS Field Effect Power Transistor
2SK1954
IC
MOSFET
Features
Low on-resistance
R
DS(on)
=0.65 (V
GS
=10V,I
D
=2A)
Low Ciss Ciss=300pF typ
+0.2
9.70
-0.2
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
6.50
+0.2
5.30
-0.2
+0.15
-0.15
High Avalanche Capability Ratings
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
180
20
4.0
20
150
-55 to +150
Unit
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to Source Cutoff Voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=180V,V
GS
=0
V
GS
= 20V,V
DS
=0
2.0
0.5
0.52
300
V
DS
=10V,V
GS
=0,f=1MHZ
170
50
9
I
D
=2A,V
GS(on)
=10V,R
L
=50
12
28
12
0.65
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
100
10
4.0
Unit
A
A
V
S
V
GS(off)
V
DS
=10V,I
D
=1mA
Y
fs
V
DS
=10V,I
D
=2.0A
R
DS(on)
V
GS
=10V,I
D
=2.0A
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
3
.8
0
Built-in G-S Gate Protection Diode
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