SMD Type
MOS Field Effect Transistor
2SK1959
SOT-89
IC
MOSFET
Unit: mm
+0.1
1.50
-0.1
Features
Gate can be driven by 1.5V
Low ON resistance
R
DS(on)
=3.2 MAX.@V
GS
=1.5V,I
D
=50mA
R
DS(on)
=0.5 MAX.@V
GS
=4.0V,I
D
=1A
+0.1
4.50
-0.1
1.80
+0.1
-0.1
+0.1
2.50
-0.1
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
3.00
+0.1
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
P
D
T
ch
T
stg
Rating
16
7
2.0
2.0
150
-55 to +150
Unit
V
V
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to Source Cutoff Voltage
Forward transfer admittance
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=16V,V
GS
=0
V
GS
= 7V,V
DS
=0
0.5
1.0
0.8
0.36
0.28
160
V
DS
=3V,V
GS
=0,f=1MHZ
150
50
45
I
D
=0.5A,V
GS(on)
=3V,R
L
=6
,V
DD
=3V,R
G
=10
190
180
210
3.2
0.6
0.5
pF
pF
pF
ns
ns
ns
ns
0.8
Min
Typ
Max
100
10
1.1
Unit
A
A
V
S
V
GS(off)
V
DS
=3V,I
D
=100 A
Y
fs
V
DS
=3V,I
D
=1.0A
V
GS
=1.5V,I
D
=50mA
Drain to source on-state resistance
R
DS(on)
V
GS
=2.5V,I
D
=0.5A
V
GS
=4.0V,I
D
=1.0A
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
t
f
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