SMD Type
MOS Field Effect Transistor
2SK2111
SOT-89
IC
MOSFET
Unit: mm
+0.1
1.50
-0.1
Features
Low on-resistance
R
DS(on)
=0.6 MAX.@V
GS
=4.0V,I
D
=0.5A
High switching speed
+0.1
4.50
-0.1
1.80
+0.1
-0.1
+0.1
2.50
-0.1
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
3.00
+0.1
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
*
Symbol
V
DSS
V
GSS
I
D
I
dp
P
D
T
ch
T
stg
Rating
60
20
1.0
2.0
2.0
150
-55 to +150
Unit
V
V
A
A
W
Channel temperature
Storage temperature
* 16 cm
2
X0.7mm,ceramic substrate used
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
V
GS(th)
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
I
D
=0.5A,V
GS(on)
=10V,R
L
=50 ,R
G
=10
,V
DD
=25V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=60V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=0.5A
V
GS
=4.0V,I
D
=0.5A
V
GS
=10V,I
D
=0.5A
0.8
0.4
0.32
0.24
170
87
32
2.8
2.3
55
27
0.6
0.45
pF
pF
pF
ns
ns
ns
ns
1.4
Min
Typ
Max
1.0
10
2.0
Unit
A
A
V
S
Marking
Marking
NU
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