SMD Type
MOS Field Effect Transistor
2SK2158
SOT-23
MOSFET
Unit: mm
Capable of drive gate with 1.5 V
+0.1
2.4
-0.1
Because of high input impedance, there is no need to
consider driving current.
Bias resistance can be omitted, enabling reduction in total
number of parts.
+0.1
1.3
-0.1
1
2
0.95
+0.1
-0.1
+0.1
1.9
-0.1
0.55
0.4
Features
+0.1
2.9
-0.1
+0.1
0.4
-0.1
3
+0.05
0.1
-0.01
0.97
+0.1
0.38
-0.1
+0.1
-0.1
1.Base
1 GATE
2.Emitter
2 SOURCE
3.collector
3 DRAIN
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
T
ch
T
stg
Rating
50
7.0
0.1
0.2
200
150
-55 to +150
Unit
V
V
A
A
mW
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=50V,V
GS
=0
V
GS
= 7.0V,V
DS
=0
0.5
20
32
16
12
6
V
DS
=3V,V
GS
=0,f=1MHZ
8
1
9
I
D
=20mA,V
GS(on)
=3V,R
L
=150 ,R
G
=10
,V
DD
=3V
48
21
31
50
20
15
pF
pF
pF
ns
ns
ns
ns
0.7
Min
Typ
Max
1.0
3.0
1.1
Unit
A
A
V
ms
V
GS(off)
V
DS
=3V,I
D
=10 A
Y
fs
V
DS
=3V,I
D
=10mA
V
GS
=1.5V,I
D
=1.0mA
Drain to source on-state resistance
R
DS(on)
V
GS
=2.5V,I
D
=10mA
V
GS
=4.0V,I
D
=1.0mA
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
tr
t
d(off)
tf
Marking
Marking
G23
0-0.1
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