SMD Type
Silicon N-Channel MOSFET
2SK2211
SOT-89
+0.1
4.50
-0.1
MOSFET
Unit: mm
+0.1
1.50
-0.1
1.80
+0.1
-0.1
Features
+0.1
2.50
-0.1
Low ON-resistance R
DS(ON)
High-speed switching
1
+0.1
0.48
-0.1
2
3
+0.1
0.80
-0.1
+0.1
0.53
-0.1
+0.1
0.44
-0.1
+0.1
2.60
-0.1
+0.1
4.00
-0.1
3.00
+0.1
-0.1
+0.1
0.40
-0.1
1. Base
1. Source
2. Collector
2. Drain
3. Emiitter
3. Gate
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW
10ms,Duty Cycle 50%
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
T
ch
T
stg
Rating
30
20
1.0
2.0
1
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Gate to source voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Symbol
V
DSS
V
GSS
I
DSS
I
GSS
V
th
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
I
D
=0.5A,V
GS(on)
=10V,R
L
=10 ,V
DD
=10V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
I
D
=0.1mA,V
GS
=0
I
GS
=0.1mA,V
GS
=0
V
DS
=25V,V
GS
=0
V
GS
= 15V,V
DS
=0
V
DS
=5V,I
D
=1mA
V
DS
=10V,I
D
=0.5A
V
GS
=4V,I
D
=0.5A
V
GS
=10V,I
D
=0.5A
0.8
0.5
0.48
0.35
87
69
23
12
160
60
0.75
0.6
pF
pF
pF
ns
ns
ns
Min
30
20
1.0
10
2
Typ
Max
Unit
V
V
A
A
V
S
Marking
Marking
2M
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