SMD Type
MOS Field Effect Transistors
2SK2479
TO
-
263
Features
Low On-state Resistance:R
DS(on)
=7.5 max.(V
GS
=10V,I
D
=2.0A)
Low Ciss Ciss=485pF TYP
High Avalanche Capability Ratings
+ .2
8 .7
-00.2
+ .1
1 .2 7
-00.1
Transistors
IC
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+ .2
5 .2 8
-00.2
2.54
+0.1
5.08
-0.1
+ .2
2 .5 4
-00.2
+ .2
1 5 .2 5
-00.2
+0.2
2.54
-0.2
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(pulse) *1
Total Power Dissipation T
A
=25
Total Power Dissipation T
C
=25
Channel Temperature
Storage temperature
Single Avalanche Current *2
Single Avalanche Energy *2
*1. PW
10ìs,Dduty cycle 1%.
0
Tch
T
stg
I
AS
E
AS
Symbol
V
DSS
V
GSS
I
D(DS)
I
D(pulse)
P
T
Rating
900
30
3
8
1.5
70
150
-55 to +150
3
5.4
A
mJ
Unit
V
V
A
A
W
*2.Starting Tch=25 ,R
G
=25Ù,V
GS
=20V
5 .6 0
1 Gate
2 Drain
3 Source
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