SMD Type
MOS Field Effect Transistor
2SK2415
IC
MOSFET
Features
Low On-Resistance
R
DS(on)1
= 0.10
R
DS(on)2
= 0.15
MAX. (@ V
GS
= 10 V, I
D
= 4.0A)
MAX. (@ V
GS
= 4 V, I
D
= 4.0 A)
6.50
+0.2
5.30
-0.2
+0.15
-0.15
TO-252
+0.15
1.50
-0.15
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Low
Ciss
C
iss
= 570 pF TYP.
+0.2
9.70
-0.2
+0.1
0.80
-0.1
+0.15
0.50
-0.15
0.127
max
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
+0.15
5.55
-0.15
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
T
ch
T
stg
Rating
60
20
8.0
32
20
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
Testconditons
V
DS
=60V,V
GS
=0
V
GS
= 20V,V
DS
=0
1.0
5.0
1.6
8.4
0.07
0.10
570
V
DS
=10V,V
GS
=0,f=1MHZ
290
75
5
I
D
=4A,V
GS(on)
=10V,R
G
=10 ,V
DD
=30V
60
75
40
0.10
0.15
pF
pF
pF
ns
ns
ns
ns
Min
Typ
Max
10
10
2.0
Unit
A
A
V
S
V
GS(off)
V
DS
=10V,I
D
=1mA
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
V
DS
=10V,I
D
=4A
V
GS
=10V,I
D
=4A
V
GS
=4V,I
D
=4A
3
.8
0
www.kexin.com.cn
1
KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
