SMD Type
MOS Field Effect Transistor
2SK3296
Features
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 12m
Low gate charge
Q
G
= 30 nC TYP. (I
D
= 35 A, V
DD
= 16 V, V
GS
= 10 V)
+0.2
5.28
-0.2
+0.1
1.27
-0.1
MOSFET
TO
-
263
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Unit: mm
+0.2
8.7
-0.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
Surface mount device available
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
Built-in gate protection diode
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
T
A
=25
T
C
=25
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
Rating
20
20
35
140
1.5
40
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
I
D
=18A,V
GS(on)
=10V,R
G
=10 ,V
DD
=10V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=20V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=18A
V
GS
=10V,I
D
=18A
V
GS
=4.5V,I
D
=18A
1.0
9.0
8.5
12
1300
570
300
70
1220
100
180
12
19
Min
Typ
Max
10
10
2.5
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
5.60
1 Gate
2 Drain
3 Source
MAX. (V
GS
= 10 V, I
D
= 18 A)
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