SMD Type
MOS Field Effect Transistor
2SK3325
TO
-
263
+ .1
1 .2 7
-00.1
Transistors
IC
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Low gate charge:
Q
G
= 22 nC TYP. (V
DD
= 400 V, V
GS
= 10 V, I
D
= 10 A)
+ .2
8 .7
-00.2
Gate voltage rating:
30 V
Low on-state resistance
R
DS(on)
= 0.85 Ù MAX. (V
GS
= 10 V, I
D
= 5.0 A)
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
+0.1
5.08
-0.1
+ .2
2 .5 4
-00.2
Avalanche capability ratings
+ .2
5 .2 8
-00.2
+ .2
1 5 .2 5
-00.2
+0.2
2.54
-0.2
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current(DC)
Drain Current(pulse) *1
Total Power Dissipation (T
A
= 25 )
Total Power Dissipation (T
C
= 25 )
Channel Temperature
Storage temperature
Single Avalanche Current *2
Single Avalanche Energy *2
*1. PW
10ìs,Dduty cycle 1%.
0V
Tch
T
stg
I
AS
E
AS
Symbol
V
DSS
V
GSS
I
D(DS)
I
D(pulse)
P
T
Rating
500
30
10
40
1.5
85
150
-55 to +150
10
10.7
A
mJ
Unit
V
V
A
A
W
*2. Starting Tch = 25 , V
DD
= 150 V, R
G
= 25 Ù, V
GS
= 20 V
5 .6 0
1 Gate
2 Drain
3 Source
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