欢迎访问ic37.com |
会员登录 免费注册
发布采购

2SK3355 参数 Datasheet PDF下载

2SK3355图片预览
型号: 2SK3355
PDF下载: 下载PDF文件 查看货源
内容描述: MOS场效应 [MOS Field Effect Transistor]
分类和应用: 晶体晶体管开关脉冲局域网
文件页数/大小: 1 页 / 45 K
品牌: KEXIN [ GUANGDONG KEXIN INDUSTRIAL CO.,LTD ]
   
SMD Type
MOS Field Effect Transistor
2SK3355
TO
-
263
+0.1
1.27
-0.1
MOSFET
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
Features
Super low on-state resistance:
R
DS(on)1
= 5.8 m
R
DS(on)2
= 8.8m
MAX. (V
GS
= 10 V, I
D
= 42 A)
Low C
iss
: C
iss
= 9800 pF TYP.
Built-in gate protection diode
+0.2
5.28
-0.2
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
MAX. (V
GS
= 4 V, I
D
= 42 A)
+0.2
8.7
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
T
A
=25
T
C
=25
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
T
ch
T
stg
Symbol
V
DSS
V
GSS
(AC)
I
D
I
dp
*
P
D
Rating
60
20
83
332
1.5
100
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
Q
G
Q
GS
Q
GD
V
DD
= 48V, V
GS
= 10 V, I
D
= 83A
I
D
=42A,V
GS(on)
=10V,R
G
=10 ,V
DD
=30V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=60V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=42A
V
GS
=10V,I
D
=42A
V
GS
=4V,I
D
=42A
1.5
39
2.0
77
4.6
6.1
9800
1500
630
130
1450
510
510
170
28
46
5.8
8.8
Min
Typ
Max
10
10
2.5
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5.60
1 Gate
2 Drain
3 Source
www.kexin.com.cn
1