SMD Type
MOS Field Effect Transistor
2SK3402
TO-252
IC
MOSFET
Unit: mm
2.30
+0.8
0.50
-0.7
+0.1
-0.1
Features
Low on-resistance
+0.2
9.70
-0.2
+0.1
0.80
-0.1
Built-in gate protection diode
2.3
4.60
+0.15
-0.15
+0.1
0.60
-0.1
+0.28
1.50
-0.1
+0.25
2.65
-0.1
Low C
iss
: C
iss
= 3200 pF TYP.
+0.15
0.50
-0.15
R
DS(on)2
= 22 m
MAX. (V
GS
= 4.0 V, I
D
= 18A)
0.127
max
+0.15
5.55
-0.15
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
T
C
=25
T
A
=25
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
Rating
60
20
36
144
40
1.0
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
Q
G
Q
GS
Q
GD
I
D
=36A, V
DD
= 48 V, V
GS
= 10 V
I
D
=18A,V
GS(on)
=10V,R
G
=10 ,V
DD
=30V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=60V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=18A
V
GS
=10V,I
D
=18A
V
GS
=4.0V,I
D
=18A
1.5
13
2.0
27
12
15
3200
520
270
36
310
170
180
61
8.2
17
15
22
Min
Typ
Max
10
10
2.5
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
3
.8
0
R
DS(on)1
=15 m
MAX. (V
GS
= 10 V, I
D
= 18A)
+0.15
1.50
-0.15
6.50
+0.2
5.30
-0.2
+0.15
-0.15
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