SMD Type
MOSFET
MOS Field Effect Transistor
2SK3572
TO
-
263
Features
4.5V drive available.
+0.2
8.7
-0.2
+0.1
1.27
-0.1
Unit: mm
+0.1
1.27
-0.1
+0.2
4.57
-0.2
R
DS(on)1
= 5.7m
Low gate charge
MAX. (V
GS
= 10 V, I
D
= 40A)
+0.1
1.27
-0.1
0.1max
+0.1
0.81
-0.1
+0.2
5.28
-0.2
Q
G
= 32 nC TYP. (V
DD
= 16 V, V
GS
= 10 V, I
D
= 80 A)
Built-in gate protection diode
Surface mount device available
2.54
+0.2
-0.2
+0.1
5.08
-0.1
+0.2
2.54
-0.2
+0.2
15.25
-0.2
2.54
+0.2
0.4
-0.2
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
T
C
=25
T
A
=25
Channel temperature
Storage temperature
* PW
10 s,Duty Cycle 1%
T
ch
T
stg
Symbol
V
DSS
V
GSS
I
D
I
dp
*
P
D
Rating
20
20
80
300
52
1.5
150
-55 to +150
Unit
V
V
A
A
W
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
I
DSS
I
GSS
V
GS(off)
Y
fs
R
DS(on)1
R
DS(on)2
C
iss
C
oss
C
rss
t
on
t
r
t
off
tf
Q
G
Q
GS
Q
GD
V
DD
= 16 V
V
GS
= 10 V
I
D
= 80 A
I
D
=40A,V
GS(on)
=10V,R
G
=10 ,V
DD
=10V
V
DS
=10V,V
GS
=0,f=1MHZ
Testconditons
V
DS
=20V,V
GS
=0
V
GS
= 20V,V
DS
=0
V
DS
=10V,I
D
=1mA
V
DS
=10V,I
D
=40A
V
GS
=10V,I
D
=40A
V
GS
=4.5V,I
D
=40A
1.5
15
4.4
7.4
1700
700
250
16
14
50
9
32
7.1
7.7
5.7
9.9
Min
Typ
Max
10
10
2.5
Unit
A
A
V
S
m
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
5.60
1 Gate
2 Drain
3 Source
Low on-state resistance,
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